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MS1007 |
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| Part Number | MS1007 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating con... |
| Features |
• • • • • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 -65 to +150 Unit V ... |
| Document |
 MS1007 Data Sheet
PDF 164.94KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1000 |
Advanced Power Technology |
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| 2 | MS1001 |
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| 3 | MS1003 |
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| 4 | MS1003 |
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| 5 | MS1003SH |
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| 6 | MS1004 |
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Desde 2024. D4U Semiconductor.
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