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MS1006 |
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| Part Number | MS1006 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliabilit... |
| Features |
• • • • • • • Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 ... |
| Document |
 MS1006 Data Sheet
PDF 125.77KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 4 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|
| 6 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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