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MS1000 |
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| Part Number | MS1000 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. ABSOL... |
| Features |
• • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 20 270 200 -65 t... |
| Document |
 MS1000 Data Sheet
PDF 117.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
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| 3 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
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| 5 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
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| 6 | MS1004 |
INCHANGE |
Schottky Barrier Rectifier |
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Desde 2024. D4U Semiconductor.
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