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4525GEH |
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| Part Number | 4525GEH |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute M... |
| Features |
j-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
1 200809235
AP4525GEH
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
www.datasheet4u.com
o
Symbol
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2
Max. Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω
BVDSS
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coeff... |
| Document |
 4525GEH Data Sheet
PDF 226.27KB |
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