CMBT5550 |
Part Number | CMBT5550 |
Manufacturer | CDIL |
Description | www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transi... |
Features |
a Sheet
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CMBT5550
Total power dissipation up to Tamb = 25°C Storage temperature Junction temperature THERMAL RESISTANCE from junction to ambient
Ptot Tstg Tj
max 250 mW –55 to +150 ° C max. 150 ° C Rth j –a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut –off current ICBO IE = 0; VCB = 100 V ICBO IE = 0; VCB = 100 V; Tamb = 100 °C Emitter cut –off current IEBO IC = 0; VEB = 4.0 V Breakdown voltages V(BR)CEO IC = 1 mA; IB = 0 V(BR)CBO IC = 10 µA; IE = 0 V(BR)EBO IC = 0; IE = 10 µA Saturation voltages VCEsat IC = 10 mA; IB = 1 ... |
Document |
CMBT5550 Data Sheet
PDF 135.13KB |
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