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IXFA10N60P |
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| Part Number | IXFA10N60P |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RD... |
| Features |
z z z
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220)
300 260
Md Weight
1.13/10 Nm/lb.in.
z
4 3
g g
International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±100 5 150... |
| Document |
 IXFA10N60P Data Sheet
PDF 152.33KB |
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