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IXTQ110N10P |
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| Part Number | IXTQ110N10P |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGSM ID... |
| Features |
z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
1.13/10 Nm/lb.in. 5.5 5.0 g g
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 15 V V nA µA µA mΩ
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Easy to mount Space savings High power density
VGS = 10 V,... |
| Document |
 IXTQ110N10P Data Sheet
PDF 612.25KB |
Similar Datasheet
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| 1 | IXTQ110N10P |
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