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IXTQ110N055P |
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| Part Number | IXTQ110N055P |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A = 13.5 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ... |
| Features |
z
Md Weight
1.13/10 Nm/lb.in. 5.5 4 3 g g g
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z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 55 2.5 5.0 ±100 25 250 11 13.5 V
Advantages
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V nA μA μA mΩ
z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
... |
| Document |
 IXTQ110N055P Data Sheet
PDF 151.53KB |
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Desde 2024. D4U Semiconductor.
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