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IXBH15N140 |
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| Part Number | IXBH15N140 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8... |
| Features |
• International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Reverse conducting capability VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8 •VCES Clamped inductive load, L = 100 mH TC = 25°C Applications • • • • Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts ... |
| Document |
 IXBH15N140 Data Sheet
PDF 97.14KB |
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