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3DD301C |
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| Part Number | 3DD301C |
| Manufacturer | Inchange |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
or-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 5V
3DD301C
MIN TYP. MAX UNIT
100
V
6
V
200
V
2.0
V
0.1 mA
0.1 mA
30
250
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pres... |
| Document |
 3DD301C Data Sheet
PDF 201.76KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD3010A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 2 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 3 | 3DD3015A1-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|
| 4 | 3DD3015A3 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 5 | 3DD301B |
Inchange |
Silicon Power Transistor |
|
| 6 | 3DD301D |
Inchange |
Silicon Power Transistor |
|
Desde 2024. D4U Semiconductor.
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