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3DD200 |
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| Part Number | 3DD200 |
| Manufacturer | Inchange |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot varia... |
| Features |
ACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 150V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 5V
tf
Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
MIN MAX UNIT
100
V
250
V
6
V
1.5
V
1.5
V
0.5 mA
30 120
1.0 μs
hFE Clas... |
| Document |
 3DD200 Data Sheet
PDF 207.95KB |
Desde 2024. D4U Semiconductor.
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