Busque con el número de pieza junto con el fabricante o la descripción
GWS7301E |
Click to view a larger image
| Part Number | GWS7301E |
| Manufacturer | GWS |
| Description | The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets. Using ultra high density MOSFET process and space saving small outline Jlead pack... |
| Features |
• 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts • 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts • Excellent thermal characteristics. • Rated for High Electrical Overstress Performance of 15A short circuit and over current. • Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM. Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol 10 secs VDS Drain-Source Voltage VGS Gate-Source Voltage o TA=25 C 5.7 a ID Drain Current o TA=70 C 4.6 I Pulsed Drain Current DM Maximum Power Dissipation a TSOPJW-8 Package N/C S2 S2 G2 8 7 6 5 YW... |
| Document |
 GWS7301E Data Sheet
PDF 391.34KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|