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P4NA80 |
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| Part Number | P4NA80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V o o 4 2.5 16 110 0.88 -65 to 150 150 C C ( •) Pulse width limited by safe operating area February 1994 1/10 STP4NA80/FI www.DataSheet4U.com THERMAL DATA TO-2... |
| Document |
 P4NA80 Data Sheet
PDF 280.30KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | P4NA80FI |
ST Microelectronics |
STP4NA80FI |
|
| 2 | P4NA40F1 |
ST Microelectronics |
STP4NA40F1 |
|
| 3 | P4NA60FI |
STMicroelectronics |
STP4NA60FI |
|
| 4 | P4N05L |
Intersil Corporation |
RFP4N05L |
|
| 5 | P4N150 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 6 | P4N20 |
STMicroelectronics |
N-channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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