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EN29LV010 |
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| Part Number | EN29LV010 |
| Manufacturer | Eon Silicon Solution |
| Description | The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010 features 3.0V voltage ... |
| Features |
• Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors. • High performance - Full voltage range: access times as fast as 55 ns - Regulated voltage range: access times as fast as 45ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: Eight 16 ... |
| Document |
 EN29LV010 Data Sheet
PDF 461.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EN29LV040A |
Eon Silicon Solution |
CMOS 3.0 Volt-only Flash Memory |
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| 2 | EN29LV160 |
Eon Silicon Solution |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory |
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| 3 | EN29LV160A |
Eon Silicon Solution |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory |
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| 4 | EN29LV160B |
Eon Silicon Solution |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory |
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| 5 | EN29LV160C |
EON |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory |
|
| 6 | EN29LV160J |
Eon Silicon Solution |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory |
|
Desde 2024. D4U Semiconductor.
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