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IXFN102N30P |
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| Part Number | IXFN102N30P |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102... |
| Features |
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
© 2005 IXYS All rights reserved
DS99221A(02/05)
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| Document |
 IXFN102N30P Data Sheet
PDF 140.00KB |
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