IKW75N60T Infineon Technologies IGBT Datasheet. existencias, precio

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IKW75N60T

Infineon Technologies
IKW75N60T
IKW75N60T IKW75N60T
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Part Number IKW75N60T
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode  Very low VCE(sat) 1.5V (typ.)  ...
Features Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg Tsold Value 600 802) 75 225 225 802) 75 225 20 5 428 -40...+175 -55...+150 260 Unit V A V s W ...

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