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AP3303J |
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| Part Number | AP3303J |
| Manufacturer | Advanced Power Electronics |
| Description | The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J)... |
| Features |
ion-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 110 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200811031
AP3303H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
Test Conditions VGS=0V, ID=250uA
Min. 25 2 -
Typ. 0.02 20 14.5 3 8.5 8.8 65 11 7 340 250 98
Max. Units 25 4 1 100 ±100 24 540 V V/℃ mΩ V S uA... |
| Document |
 AP3303J Data Sheet
PDF 105.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP3303 |
Diodes |
QUASI-RESONANT PWM CONTROLLER |
|
| 2 | AP3303H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP3301 |
Diodes |
QUASI-RESONANT PWM CONTROLLER |
|
| 4 | AP3302 |
Diodes |
QUASI-RESONANT PWM CONTROLLER |
|
| 5 | AP3302H |
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N-Channel MOSFET |
|
| 6 | AP3302J |
Advanced Power Electronics |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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