STW23NM60N |
Part Number | STW23NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of ... |
Features |
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Type
VDSS (@Tjmax)
RDS(on) max
ID
1
3
3 12
STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1. Limited only by maximum temperature allowed ■ ■ ■ 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertic... |
Document |
STW23NM60N Data Sheet
PDF 595.39KB |
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