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M10LZ47 |
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| Part Number | M10LZ47 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SM10LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM10LZ47 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 800V l R.M.S. On−State Current l High... |
| Features |
TM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
1
2001-07-10
SM10LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.DataSheet4U.com Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt (dv / dt) c ITM = 15A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 600V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = ... |
| Document |
 M10LZ47 Data Sheet
PDF 123.92KB |
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|---|---|---|---|---|
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| 3 | M1008 |
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| 6 | M100A |
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