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M366S0824ET0 |
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| Part Number | M366S0824ET0 |
| Manufacturer | Samsung Semiconductor |
| Description | The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824ET0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mi... |
| Features |
formance range Part No. M366S0824ET0-C1H M366S0824ET0-C1L • • • • • Max Freq. (Speed) 100MHz (10ns @ CL=2) 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Serial presence detect with EEPROM • PCB : Height (1,375mil) , double sided component PIN CONFIGURATIONS (... |
| Document |
 M366S0824ET0 Data Sheet
PDF 133.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M366S0824CT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 2 | M366S0824CTL |
Samsung Semiconductor |
SDRAM DIMM |
|
| 3 | M366S0824DT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 4 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 5 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM |
|
| 6 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM |
|
Desde 2024. D4U Semiconductor.
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