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H7N0608FM |
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| Part Number | H7N0608FM |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H7N0608FM Silicon N Channel MOS FET Power Switching REJ03G0165-0100Z Rev.1.00 Dec.04.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 6.5 mΩ typ. • Low drive current • 4.5 V gate drive... |
| Features |
• Low on-resistance RDS(on) = 6.5 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Dec.04.2003, page 1 of 9 H7N0608FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 50 200 50 40 137 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Cha... |
| Document |
 H7N0608FM Data Sheet
PDF 141.64KB |
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| 2 | H7N0608L |
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