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H7N0607DS |
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| Part Number | H7N0607DS |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive curren... |
| Features |
• Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value a... |
| Document |
 H7N0607DS Data Sheet
PDF 118.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H7N0607DL |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 2 | H7N0602AB |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 3 | H7N0602LD |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 4 | H7N0602LM |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 5 | H7N0602LS |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 6 | H7N0603DL |
Renesas Technology |
Silicon N-Channel MOSFET |
|
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