STU11NC60 STMicroelectronics N-channel Power MOSFET Datasheet. existencias, precio

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STU11NC60

STMicroelectronics
STU11NC60
STU11NC60 STU11NC60
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Part Number STU11NC60
Manufacturer STMicroelectronics (https://www.st.com/)
Description The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...
Features TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 11 8 44 160 1.28 4.5
  –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/µ s, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/ °C V/ns °C °C (
•)Pulse width limited by safe operating area June 2000 1/8 STU11NC60 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0....

Document Datasheet STU11NC60 Data Sheet
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