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STU9NB80 |
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| Part Number | STU9NB80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
D ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 800 800 ± 30 9 5.6 36 160 1.28 4 -65 to 150 150 (1) I SD ≤ 9.3A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C ( •) Pulse width limited by safe operating area July... |
| Document |
 STU9NB80 Data Sheet
PDF 114.57KB |
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Desde 2024. D4U Semiconductor.
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