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STU7NB90I |
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| Part Number | STU7NB90I |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled wit... |
| Features |
Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STU7NB90 900 900 ±30 7.3 4.6 29.2 170 1.36 4 –65 to 150 150 2500 7.3 (*) 4.6 (*) 29.2 (*) 60 0.47 STU7NB90I Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse width limited by safe operating area ... |
| Document |
 STU7NB90I Data Sheet
PDF 338.36KB |
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Desde 2024. D4U Semiconductor.
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