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STU7NB100 |
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| Part Number | STU7NB100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
MAXIMUM RATINGS
Symbol VDS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1) T stg Tj March 1999 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 1000 1000 ± 30 7.3 4.7 29 160 1.28 4 -65 to 150 150 (1) ISD ≤7.3 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1... |
| Document |
 STU7NB100 Data Sheet
PDF 69.10KB |
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