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SB073P200-W-AG |
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| Part Number | SB073P200-W-AG |
| Manufacturer | TRANSYS Electronics Limited |
| Description | SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wa... |
| Features |
Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier
1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al"
Anode
www.DataSheet4U.com
Solderable Surface Ti/Ni/Ag Cathode
Cathode
Symbol
Electrical Characteristics @ 25 C
Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2)
Symbol Unit
... |
| Document |
 SB073P200-W-AG Data Sheet
PDF 184.23KB |
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