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TTS3816B4E |
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| Part Number | TTS3816B4E |
| Manufacturer | TwinMOS |
| Description | The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four-banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) ORDERING INFORMATION Part No. TTS3816B4E-7 TTS3816B4E-6 TTS3816B4E-6A TTS3816B4E-6B TTS3816B4E-6C TTS3816B4E-6D TTS3816B4E-6E Max Freq. 100MHz 2-2-2 133MHz 3-3-3 100MHz ... |
| Document |
 TTS3816B4E Data Sheet
PDF 302.99KB |
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Desde 2024. D4U Semiconductor.
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