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2SK1297 |
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| Part Number | 2SK1297 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1297 Silicon N-Channel MOS FET www.DataSheet4U.com November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gat... |
| Features |
x x x x
x
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1297
Absolute Maximum Ratings (Ta = 25GC)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
www.DataSheet4U.com Channel dissipation
Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Ratings 60
Unit V V A A A W
r20
40 160 40 100 150 –55 to +15... |
| Document |
 2SK1297 Data Sheet
PDF 78.10KB |
Similar Datasheet
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| 6 | 2SK1296 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
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Desde 2024. D4U Semiconductor.
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