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C5196 |
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| Part Number | C5196 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • • Complementary to 2SA1939 Suitable for use in 40-W high fidelity audio amplifier’s output ... |
| Features |
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-10
2SC5196
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage www.DataSheet4U.com Transition frequency Collector output capacitance VCE (sat) VBE fT... |
| Document |
 C5196 Data Sheet
PDF 152.12KB |
Desde 2024. D4U Semiconductor.
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