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FPD750P100 |
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| Part Number | FPD750P100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution st... |
| Features |
♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz
FPD750P100
www.DataSheet4U.com
• DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-p... |
| Document |
 FPD750P100 Data Sheet
PDF 214.15KB |
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| 5 | FPD7612 |
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| 6 | FPD7612P70 |
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Desde 2024. D4U Semiconductor.
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