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MTP7N20E |
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| Part Number | MTP7N20E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP7N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is d... |
| Features |
ES 200 VOLTS RDS(on) = 0.70 OHMS
®
D
G S
CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Adc, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction t... |
| Document |
 MTP7N20E Data Sheet
PDF 186.10KB |
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