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MTP75N06HD |
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| Part Number | MTP75N06HD |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density H... |
| Features |
DS(on) = 10.0 mOHM 60 VOLTS
™
G CASE 221A –06, Style 5 TO –220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Single Pulse Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.177 mH, RG = 25 Ω) Thermal Resistance — Junction t... |
| Document |
 MTP75N06HD Data Sheet
PDF 220.66KB |
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