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MRF3010 |
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| Part Number | MRF3010 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3010/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for IMARSAT satellite ... |
| Features |
0B –01, STYLE 1 S • Characterized with Small –Signal S –Parameters from 500 to 2500 MHz MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value 65 ± 20 – 65 to +150 200 Unit Vdc Vdc °C °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –Source Breakdown Voltage (VGS = 0, ID = 1 µA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate –Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 10 1 ... |
| Document |
 MRF3010 Data Sheet
PDF 108.76KB |
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