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STD3N30 |
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| Part Number | STD3N30 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | STD3N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N30 www.DataSheet4U.com s s s s s V DSS 300 V R DS( on) < 1.4 Ω ID 3A s s TYPICAL RDS(on) = 1.1 Ω AVALANCHE RUGGED TECHNOLOGY 1... |
| Features |
) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 300 300 ± 20 3 2 12 50 0.4 -65 to 150 150
Unit V V V A A A W W/o C
o o
C C
( •) Pulse width limited by safe operating area December 1996 1/10 STD3N30 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.5 100 1.5 275 o o C/W C/W o C/W o C A... |
| Document |
 STD3N30 Data Sheet
PDF 176.18KB |
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