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TH58NVG2S3BTG00 |
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| Part Number | TH58NVG2S3BTG00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Lead-Free The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blo... |
| Features |
• Organization TH58NVG2S3B 2112 × 128K × 8 × 2 2112 × 8 2112 bytes (128K + 4K) bytes Memory cell array www.DataSheet4U.com Register Page size Block size • • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output Command control Number of valid blocks Max 4096 blocks Min 4016 blocks Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 100000 Cycles (With ECC) Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (50 ns cycle) Program (avg.) Erase (avg.) Standby 25 µs max ... |
| Document |
 TH58NVG2S3BTG00 Data Sheet
PDF 345.74KB |
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Desde 2024. D4U Semiconductor.
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