IXSH15N120BD1 IXYS Corporation Improved SCSOA Capability Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IXSH15N120BD1

IXYS Corporation
IXSH15N120BD1
IXSH15N120BD1 IXSH15N120BD1
zoom Click to view a larger image
Part Number IXSH15N120BD1
Manufacturer IXYS Corporation
Description IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR ...
Features
• High Blocking Voltage
• Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 125°C 6 50 2.5 ±100 TJ = 125°C 3.0 2.8 3.4 V V mA...

Document Datasheet IXSH15N120BD1 Data Sheet
PDF 88.56KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXSH15N120B
IXYS
High-Voltage IGBT Datasheet
2 IXSH15N120A
IXYS Corporation
IGBT Datasheet
3 IXSH15N120AU1
IXYS Corporation
IGBT Datasheet
4 IXSH10N60B2D1
IXYS
High-Speed IGBT Datasheet
5 IXSH16N60U1
IXYS
IGBT Datasheet
6 IXSH20N60
IXYS
High Speed IGBT Datasheet
More datasheet from IXYS Corporation
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad