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IXSN80N60BD1 |
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| Part Number | IXSN80N60BD1 |
| Manufacturer | IXYS Corporation |
| Description | IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E www.DataSheet4U.com Symbol Test Conditions TJ =... |
| Features |
International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduced RFI z Low package inductance (< 10 nH) - easy to drive and to protect
z
B V CES V GE(th) I CES I GES VCE(sat)
IC IC
= 500 µA, VGE = 0 V = 8 mA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC
Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterru... |
| Document |
 IXSN80N60BD1 Data Sheet
PDF 627.37KB |
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Desde 2024. D4U Semiconductor.
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