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IXSN35N100U1 |
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| Part Number | IXSN35N100U1 |
| Manufacturer | IXYS Corporation |
| Description | IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 www.DataSheet4U.com 1 Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C... |
| Features |
International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect
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BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 6 mA, VGE = 0 V = 10 mA, VCE = VGE
V CE = 0.8 • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Applicatio... |
| Document |
 IXSN35N100U1 Data Sheet
PDF 98.09KB |
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Desde 2024. D4U Semiconductor.
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