IXSK35N120AU1 IXYS Corporation High Voltage IGBT Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IXSK35N120AU1

IXYS Corporation
IXSK35N120AU1
IXSK35N120AU1 IXSK35N120AU1
zoom Click to view a larger image
Part Number IXSK35N120AU1
Manufacturer IXYS Corporation
Description High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA)...
Features
• International standard package JEDEC TO-264 AA
• High frequency IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity
• Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/13 10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 5 mA, V...

Document Datasheet IXSK35N120AU1 Data Sheet
PDF 72.88KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXSK35N120BD1
IXYS Corporation
HIGH VOLTAGE IGBT WITH DIODE Datasheet
2 IXSK30N60BD1
IXYS Corporation
High Speed IGBT Datasheet
3 IXSK30N60CD1
IXYS Corporation
Short Circuit SOA Capability Datasheet
4 IXSK40N60CD1
IXYS Corporation
IGBT Datasheet
5 IXSK50N60AU1
IXYS Corporation
IGBT Datasheet
6 IXSK50N60BU1
IXYS Corporation
IGBT Datasheet
More datasheet from IXYS Corporation
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad