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APT40GP90B2DQ2 |
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| Part Number | APT40GP90B2DQ2 |
| Manufacturer | Advanced Power Technology |
| Title | POWER MOS 7 IGBT |
| Features |
g and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C ... |
| Document |
 APT40GP90B2DQ2 Data Sheet
PDF 476.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT40GP90B2DQ2G |
Advanced Power Technology |
POWER MOS 7 IGBT |
|
| 2 | APT40GP90B |
Advanced Power Technology |
POWER MOS-7 IGBT |
|
| 3 | APT40GP90J |
Advanced Power Technology |
POWER MOS-7 IGBT |
|
| 4 | APT40GP90JDQ2 |
Advanced Power Technology |
POWER MOS 7 IGBT |
|
| 5 | APT40GP60B |
Advanced Power Technology |
POWER MOS-7 IGBT |
|
| 6 | APT40GP60B2DF2 |
Advanced Power Technology |
POWER MOS 7 IGBT |
|
Desde 2024. D4U Semiconductor.
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