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APT40GF120JRDQ2 |
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| Part Number | APT40GF120JRDQ2 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT co... |
| Features |
mps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1 200
2 2
6.5 3.0
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
Vol... |
| Document |
 APT40GF120JRDQ2 Data Sheet
PDF 613.26KB |
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Desde 2024. D4U Semiconductor.
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