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AP30G120SW |
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| Part Number | AP30G120SW |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power Electronics Corp. AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.... |
| Features |
▼ High Speed Switching ▼ Low Saturation Voltage
VCES IC
VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
G C E
TO-3P
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
VCES
Collector-Emitter Voltage
1200
VGE Gate-Emitter Voltage
+30
IC@TC=25℃
Collector Current
60
IC@TC=100℃ ICM
Collector Current Pulsed Collector Current1
30 120
IF@TC=25℃
Diode Forward Current
20
IF@TC=100℃
Diode Forward Current
10
IFM Diode Pulse Forward Current
40
PD@TC=25℃
Maximum Power Dissipation
208
TSTG
Storage Temperature R... |
| Document |
 AP30G120SW Data Sheet
PDF 135.82KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP30G120ASW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | AP30G120ASW-HF |
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP30G120BSW-HF |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | AP30G120CSW-HF |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| 5 | AP30G120W |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | AP30G100W |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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