K3233 |
Part Number | K3233 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric ... |
Features |
• Low on-resistance: www.DataSheet4U.com • • • • R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO –220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3233 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current www.DataShee... |
Document |
K3233 Data Sheet
PDF 100.12KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K3235 |
Renesas |
2SK3235 | |
2 | K3236 |
TOSHIBA |
2SK3236 | |
3 | K320 |
Hitachi Semiconductor |
2SK320 | |
4 | K3207EC450 |
IXYS |
Medium Voltage Thyristor | |
5 | K3207EC480 |
IXYS |
Medium Voltage Thyristor | |
6 | K3207EC520 |
IXYS |
Medium Voltage Thyristor |