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SSM6J25FE |
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| Part Number | SSM6J25FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: ... |
| Features |
i.e.
JEITA TOSHIBA
― 2-2N1A
operating temperature/current/voltage, etc.) are within the
Weight: 3.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
654
Equivalent Circuit (top view)
6 54
PH
123
123
Handling Precaution
When handling individual devices (whic... |
| Document |
 SSM6J25FE Data Sheet
PDF 199.86KB |
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Desde 2024. D4U Semiconductor.
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