SSM6J23FE |
Part Number | SSM6J23FE |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to comp... |
Features |
ture/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
Equivalent Circuit
654
654
KE
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protec... |
Document |
SSM6J23FE Data Sheet
PDF 350.56KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM6J205FE |
Toshiba Semiconductor |
High-Speed Switching Applications | |
2 | SSM6J206FE |
Toshiba Semiconductor |
High-Speed Switching Applications | |
3 | SSM6J207FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | SSM6J212FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
5 | SSM6J213FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
6 | SSM6J214FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |