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SSM6J207FE |
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| Part Number | SSM6J207FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (... |
| Features |
ndbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
ES6
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain –source ON-resistance Input capacitance Output capacitance Reverse transfer capa... |
| Document |
 SSM6J207FE Data Sheet
PDF 204.87KB |
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Desde 2024. D4U Semiconductor.
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