SSM6J205FE |
Part Number | SSM6J205FE |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance:... |
Features |
e maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
JEDEC JEITA TOSHIBA
― ― 2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer adm... |
Document |
SSM6J205FE Data Sheet
PDF 182.85KB |
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