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IXFH11N80 |
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| Part Number | IXFH11N80 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS 800 V 800 V I D25 11 A 13 A trr £ 250 ... |
| Features |
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA 800 VDS = VGS, ID = 4 mA 2.0 VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 11N80 13N80 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4.5 V ±100 nA 25... |
| Document |
 IXFH11N80 Data Sheet
PDF 665.40KB |
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Desde 2024. D4U Semiconductor.
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