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IXGN200N60 |
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| Part Number | IXGN200N60 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES 600 V 600 V IC25 200 A 200 A VCE(sat) 2.5 V 2.7 V E www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG... |
| Features |
International standard package miniBLOC (ISOTOP compatible) Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH) - easy to drive and to protect
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 6 200 2 ±400 200N60 200N60A 2.5 2.7 V V mA mA nA V V
BVCES VGE(th) ICES IGES... |
| Document |
 IXGN200N60 Data Sheet
PDF 132.40KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXGN200N60A |
IXYS Corporation |
HiPerFAST IGBT |
|
| 2 | IXGN200N60A2 |
IXYS |
IGBT |
|
| 3 | IXGN200N60B |
IXYS Corporation |
HiPerFASTTM IGBT |
|
| 4 | IXGN100N170 |
IXYS |
High Voltage IGBT |
|
| 5 | IXGN120N60A3 |
IXYS |
IGBT |
|
| 6 | IXGN120N60A3D1 |
IXYS |
IGBT |
|
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